RF Transistor (SiGe / GaAs D-PHEMT / GaAs E-PHEMT)
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UA2700 SiGe RF Transistor: NPN silicon-germanium transistor for low-noise, high-gain amplification in DVB-S, GPS, and LNA applications; operates at 1.8–3.3 V, fT = 29 GHz, MAG = 19.5 dB @ 2 GHz.
1. SiGeThe UA2700 NPN silicon RF transistor provides low noise and high gain amplification forDVB-S, STB, GPS, LNA/Mixer/Oscillator.*P/N:UA2700*Vcc(V):1.8V~3.3V*ICC(mA):1 ~ 30*Current Gain(hFE):100~200*Cutoff Freq.(fT):29GHz*MAG @2GHz(dB):19.5*NF@2GHz(dB):1.1*Pout_1dB(dBm):13.5*PKG.: 4-pin SOT3432.GaAs D-PHEMTApplication: DVB-S LNB, 5G small cell LNA, GPS LNA, Microwave Motion Sensor*P/N:UA2810 / UA2811*VDD(V):1.2~3.3V*IDD(mA):2 ~ 20*VGS_OFF(V):-0.35*fMAX (GHz):175*fT (GHz):115*GA @12GHz(dB):12.5*NF@12GHz(dB):0.35*Pout_1dB(dBm):5.5*PKG.: die or SOT5433.GaAs E-PHEMT*P/N:UA2818*VDD(V):1.5~5V*IDD(mA):10 ~ 80*VGS_OFF(V): 0*GA @6GHz(dB):12.5*NF@6GHz(dB):0.4*Pout_1dB(dBm):20*PKG.: SOT543
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